M-WERC PROJECT

ENERGY

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Wideband gap semiconductor devices such as Gallium Nitride and Silicon Carbide are seeing increased attention due to the positive impacts to power density, specific power, and efficiency gains of power converters. These devices are more expensive than traditional silicon solutions, but the cost is often offset by other gains such as reduced heatsink sizes and reduced passive sizes which leads to a cheaper more efficient solution. Although these devices have many benefits, a significant issue with these devices is the rate of speed at which they switch relative to silicon. These devices switch incredibly fast which creates issues with electromagnetic interference (EMI) and electromagnetic compliance (EMC). This project will create a standard testbed for EMI and EMC testing of high-power wide band-gap devices. The test bed will be used to test traditional solutions, used in industry and found in literature, and compare those to new novel cost effective and efficient solutions leading to an optimal solution for compliant power converters.

EMC Test Fixture

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